In the present work. fabrication and characterization of Al/MgO/Si MOSdevice has been carried out using PLD as a deposition technique. and forcomparison Al/SiO2/Si MOS device has been also constructed. The obtainedresult show that . https://www.spidertattooz.com/NYX-Total-Control-Drop-Foundation-Brush-PROB22-p11165/